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TYPICAL PERFORMANCE CURVES (R)
APT45GP120JDQ2 1200V
APT45GP120JDQ2
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 800V, 16A * 50 kHz operation @ 800V, 30A * RBSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT45GP120JDQ2 UNIT Volts
1200 30 75 34 170 170A @ 960V 329 -55 to 150 300
Amps
@ TC = 150C
Reverse Biad Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 750A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 3 4.5 3.3 3.0 750
2 2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 45A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7445
APT Website - http://www.advancedpower.com
Rev A
6-2005
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT45GP120JDQ2
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 45A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
3995 300 55 7.5 185 25 80 170 18 29 100 38 900 1870 905 18 29 150 80 900 3080 2255 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 45A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V I C = 45A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.38 1.10 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7445
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
90 80 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) 70 60 50 40 30 20 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
90 80 70 60 50 40 30 20 10 0
APT45GP120JDQ2
TJ = 25C TJ = 125C
TJ = 25C TJ = 125C
160 140 120 100
FIGURE 1, Output Characteristics(TJ = 25C)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 45A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
VCE = 240V VCE = 600V
TJ = -55C
80 60 40 20 0 0 1 TJ = 25C
8 6 4 2 0 0
VCE = 960V
TJ = 125C
234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
20 40 60 80 100 120 140 160 180 200 GATE CHARGE (nC) FIGURE 4, Gate Charge
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
IC = 90A
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
5
5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 .05 0 0
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
4
IC = 90A IC = 45A
IC = 45A
3
IC = 22.5A
2
IC = 22.5A
1
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.20
0
6
25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 120
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50
100 80 60 40 20 0 -50
050-7445
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev A
6-2005
25 VGE = 15V td (OFF), TURN-OFF DELAY TIME (ns) td(ON), TURN-ON DELAY TIME (ns)
180 160 140 120 100 80 60 40
VCE = 600V 20 RG = 5 L = 100 H VGE =15V,TJ=25C VGE =15V,TJ=125C
APT45GP120JDQ2
20
15
10
5 VCE = 600V
100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 0
0
TJ = 25C, TJ =125C RG = 5 L = 100 H
100 80 60 40 20 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 0
0
80 70 60 50 40 30 20 10 0
RG = 5, L = 100H, VCE = 600V
100
RG = 5, L = 100H, VCE = 600V
80 tf, FALL TIME (ns)
TJ = 125C, VGE = 15V
tr, RISE TIME (ns)
60
40
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
20
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
0
8000 EON2, TURN ON ENERGY LOSS (J) 7000 6000 5000 4000 3000 2000 1000 0
EOFF, TURN OFF ENERGY LOSS (J)
V = 600V CE V = +15V GE R = 5
G
6000 5000 4000 3000 2000 1000
= 600V V CE = +15V V GE R = 5
G
TJ = 125C,VGE =15V
TJ = 125C, VGE = 15V
TJ = 25C,VGE =15V
TJ = 25C, VGE = 15V
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
100 80 60 40 20 0 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
0
12000 SWITCHING ENERGY LOSSES (J) 10000 8000 6000 4000 2000 0
SWITCHING ENERGY LOSSES (J)
= 600V V CE = +15V V GE T = 125C
J
8000 7000 6000 5000 4000 3000 2000 1000 0
= 600V V CE = +15V V GE R = 5
G
Eon2,90A
Eon2,90A
Eoff,90A
Eon2,45A Eoff,45A
Eoff,90A Eon2,45A Eoff,45A Eon2,22.5A Eoff,22.5A
6-2005
Eon2,22.5A Eoff,22.5A
Rev A
050-7445
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
125 100 75 50 25 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature 0
TYPICAL PERFORMANCE CURVES
10,000 Cies IC, COLLECTOR CURRENT (A)
180 160 140 120 100 80 60 40 20
APT45GP120JDQ2
C, CAPACITANCE ( F)
1,000 Coes 100
P
Cres
10 0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 800 900 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Reverse Bias Safe Operating Area
0
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0 10-5 0.5
Note:
0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
PDM
0.3
t1 t2
0.1 0.05 10-4
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
10
90 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL
Junction temp. (C)
50
0.0339
0.0004
F
10 5
T = 125C J T = 75C C D = 50 % V = 800V CE R = 5
G
Power (watts)
0.0806
0.0269
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
0.265 Case temperature. (C)
0.608
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
20 30 40 50 60 70 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
1 10
050-7445
Rev A
6-2005
APT45GP120JDQ2
APT30DQ120
Gate Voltage
10%
T J = 125 C
Collector Voltage
V CC
IC
V CE
tr
td(on)
90%
A D.U.T.
Collector Current
5%
10%
5%
Switching Energy
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST *DRIVER SAME TYPE AS D.U.T.
90%
Gate Voltage t d(off) 90% tf Collector Voltage
T J = 125 C
A V CE 100uH IC V CLAMP A DRIVER* D.U.T. B
0 Switching Energy 10% Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7445
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
APT45GP120JDQ2
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 100C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 45A Forward Voltage IF = 90A IF = 40A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT45GP120JDQ2 UNIT Amps
26 37 210
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 2.9 3.56 2.28
MIN TYP MAX UNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM
ZJC, THERMAL IMPEDANCE (C/W)
Characteristic
Test Conditions
Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
1.20 1.00 0.80 0.60 0.40 0.20 0 0.9
25 300 360 4 380 1700 8 160 2550 28 -
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 30A, diF/dt = -200A/s VR = 800V, TC = 125C
IF = 30A, diF/dt = -1000A/s VR = 800V, TC = 125C
0.7
0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.219 0.00306
0.468
0.0463
Case temperature (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7445
0.341
0.267
Rev A
Power (watts)
6-2005
100 trr, REVERSE RECOVERY TIME (ns) 90 IF, FORWARD CURRENT (A) 80 70 60 50 40 30 20 10 0 0 TJ = 125C TJ = -55C TJ = 175C TJ = 25C
450 400 350 300 250 200 150 100 50 30A 60A
APT45GP120JDQ2
T = 125C J V = 800V
R
15A
1 2 3 4 5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage
T = 125C J V = 800V
R
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 30 25 20 15 10
T = 125C J V = 800V
R
0
4000 Qrr, REVERSE RECOVERY CHARGE (nC) 3500 3000 2500 2000 1500 1000 500 0
60A
60A
30A
30A
15A
15A
5 0
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 trr 0.8 0.6 0.4 0.2 0.0 trr Qrr
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 45 40 35 30 IF(AV) (A) 25 20 15 10 5
Duty cycle = 0.5 T = 175C
J
IRRM
Qrr
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature
200 CJ, JUNCTION CAPACITANCE (pF)
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
150
100
6-2005
50
Rev A
050-7445
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
0
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT10035LLL
APT45GP120JDQ2
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7445
Rev A
6-2005
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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